? 2009 ixys corporation, all rights reserved ds100117a(11/09) high voltage power mosfet ( electrically isolated tab) n-channel enhancement mode features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 4000v electrical isolation z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge z pulse circuits IXTF03N400 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 4000 v v dgr t j = 25 c to 150 c, r gs = 1m 4000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 300 ma i dm t c = 25 c, pulse width limited by t jm 800 ma p d t c = 25 c70w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v isol 50/60hz , 1 minute 4000 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 4000 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 10 a note 2, t j = 125 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 300 v dss = 4000v i d25 = 300ma r ds(on) 300 advance technical information 1 = gate 5 = drain 2 = source isoplus i4-pak tm isolated tab 1 5 2
ixys reserves the right to change limits, test conditions, and dimensions. IXTF03N400 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 100ma, note 1 110 180 ms c iss 435 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 19 pf c rss 6 pf t d(on) 17 ns t r 16 ns t d(off) 86 ns t f 58 ns q g(on) 16.3 nc q gs v gs = 10v, v ds = 1kv, i d = 0.5 ? i d25 1.9 nc q gd 8.8 nc r thjc 1.78 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 300 ma i sm repetitive, pulse width limited by t jm 1.2 a v sd i f = 300ma, v gs = 0v, note 1 3.0 v t rr i f = 1a, -di/dt = 100a/ s, v r = 200v 2.8 s resistive switching times v gs = 10v, v ds = 250v, i d = 150ma r g = 50 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = source pin 3 = drain tap 4 = electically isolated 4000v pin 1 = gate pin 2 = source pin 3 = drain tab 4 = isolated notes: 1. pulse test, t < 300 s, duty cycle, d < 2%. 2. device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway.
? 2009 ixys corporation, all rights reserved IXTF03N400 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 102030405060708090 v ds - volts i d - milliamperes v gs = 10v 6v 5v 4v fig. 3. output characteristics @ t j = 125oc 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 v ds - volts i d - milliamperes v gs = 10v 6v 5v 4v 3v fig. 4. r ds(on) normalized to i d = 150ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 300ma i d = 150ma fig. 5. r ds(on) normalized to i d = 150ma value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 100 200 300 400 500 600 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - milliamperes fig. 2. extended output characteristics @ t j = 25oc 0 100 200 300 400 500 600 700 0 50 100 150 200 250 300 350 400 v ds - volts i d - milliamperes v gs = 10v 6v 4v 5v
ixys reserves the right to change limits, test conditions, and dimensions. IXTF03N400 ixys ref: t_03n400(3p)10-27-09 fig. 12. maximum transient thermal impedance 0.1 1.0 10.0 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance adad 3.0 fig. 7. input admittance 0 50 100 150 200 250 300 350 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - milliamperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 i d - milliamperes g f s - millisiemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 700 800 900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v sd - volts i s - milliamperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 1012141618 q g - nanocoulombs v gs - volts v ds = 1000v i d = 150ma i g = 1ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
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